APTGTQ100A65T1G APTGTQ100A65T1G C rev 0 may, 2016 www.microsemi.com 1-6 all ratings @ t j = 25c unless otherwise specified absolute maximum ratings (per igbt) these devices are se nsitive to electrostatic discharge. prope r handling procedures should be follo wed. 9 q2 q1 10 12 2 1 7 8 11 34 cr1 cr2 56 ntc pins 1/2 ; 3/4 ; 5/6 must be shorted together symbol parameter max ratings unit v ces collector - emitter voltage 650 v i c continuous collector current t c = 25c 100 a t c = 80c 60 i cm pulsed collector current t c = 25c 200 v ge gate C emitter voltage 20 v p d power dissipation 250 w application ? welding converters ? switched mode power supplies ? uninterruptible power supplies ? motor control features ? trench + field stop igbt5 technology - low voltage drop - low tail current - switching frequency up to 100 khz - low leakage current ? very low stray inductance ? internal thermistor for temperature monitoring benefits ? outstanding performance at high frequency operation ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? solderable terminals both for power and signal for easy pcb mounting ? low profile ? rohs compliant phase leg high speed trenchstop 5 igbt power module v ces = 650v i c = 100a @ tc = 25c downloaded from: http:///
APTGTQ100A65T1G APTGTQ100A65T1G C rev 0 may, 2016 www.microsemi.com 2-6 electrical characteristics (per igbt) symbol characteristic test conditions min typ max unit i ces zero gate voltage collector current v ge = 0v, v ce = 650v 100 a v ce(sat) collector emitter saturation voltage v ge =15v i c = 100a t j = 25c 1.65 2.2 v t j = 150c 1.9 v ge ( th ) gate threshold voltage v ge = v ce , i c = 1ma 3.3 4.0 4.7 v i ges gate C emitter leakage current v ge = 20v, v ce = 0v 240 na dynamic characteristics (per igbt) symbol characteristic test conditions min typ max unit c ies input capacitance v ge = 0v v ce = 25v f = 1mhz 6000 pf c oes output capacitance 100 c res reverse transfer capacitance 22 q g gate charge v ge = 15v, i c = 100a v ce = 520v 240 nc t d(on) turn-on delay time inductive switching (25c) v ge = 15v v bus = 400v i c = 50a r g = 2 21 ns t r rise time 15 t d(off) turn-off delay time 180 t f fall time 18 t d(on) turn-on delay time inductive switching (150c) v ge = 15v v bus = 400v i c = 50a r g = 2 20 ns t r rise time 15 t d(off) turn-off delay time 205 t f fall time 26 e on turn on energy v ge = 15v v bus = 400v i c = 50a r g = 2 t j = 150c 1.5 mj e off turn off energy t j = 150c 0.6 r gint integrated gate resistor 2.5 ? r thjc junction to case thermal resistance 0.6 c/w diode ratings and characteristics (per diode) symbol characteristic test conditions min typ max unit v rrm peak repetitive reverse voltage 650 v i rm reverse leakage current v r =650v 100 a i f dc forward current tc = 25c 100 a v f diode forward voltage i f = 100a v ge = 0v t j = 25c 1.6 2.2 v t j = 150c 1.65 t rr reverse recovery time i f = 50a v r = 400v di/dt =3000a/s t j = 25c 46 ns t j = 150c 62 q rr reverse recovery charge t j = 25c 1 c t j = 150c 2 r thjc junction to case thermal resistance 0.7 c/w downloaded from: http:///
APTGTQ100A65T1G APTGTQ100A65T1G C rev 0 may, 2016 www.microsemi.com 3-6 temperature sensor ntc (see application note apt0406 on www.microsemi.com). symbol characteristic min typ max unit r 25 resistance @ 25c 50 k ? r 25 /r 25 5 % b 25/85 t 25 = 298.15 k 3952 k ? b/b t c =100c 4 % ?? ? ?? ? ? ?? ? ? ?? ? ? = t t b r r t 1 1 exp 25 85/25 25 thermal and package characteristics symbol characteristic min max unit v isol rms isolation voltage, any terminal to case t =1 min, 50/60hz 4000 v t j operating junction temperature range -40 175 c t jop recommended junction temperature under switching conditions -40 t j max -25 t stg storage temperature range -40 125 t c operating case temperature -40 125 torque mounting torque to heatsink m4 2 3 n. m wt package weight 80 g package outline (dimensions in mm) see application note 1904 - mounting instructions for sp1 power modules on www.microsemi.com t: thermistor temperature r t : thermistor value at t downloaded from: http:///
APTGTQ100A65T1G APTGTQ100A65T1G C rev 0 may, 2016 www.microsemi.com 4-6 typical performance curve t j =25c t j =150c 0 50 100 150 200 00.511.522.53 i c (a) v ce (v) output characteristics (v ge =15v) v ge =15v v ge =13v v ge =20v v ge =8v 0 50 100 150 200 00.511.522.533.54 i c (a) v ce (v) output characteristics t j = 150c t j =25c t j =150c 0 50 100 150 200 3.5 4.5 5.5 6.5 7.5 i c (a) v ge (v) transfert characteristics eon eof f 0 2 4 6 8 10 0 50 100 150 200 e ( m j ) i c (a) energy losses vs collector current v ce = 400v v ge = 15v r g = 2 ? t j = 150c eon eof f 0.5 1 1.5 2 2.5 123456789 e ( m j ) gate resistance (ohms) v ce = 400v v ge =15v i c = 50a t j = 150c sw itching energy losses vs gate resistance d = 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.00001 0.0001 0.001 0.01 0.1 1 10 thermal impedance (c/w) re ctangular pulse duration in seconds maxim um effective transient thermal im pedance, junction to case vs pulse d uration igbt downloaded from: http:///
APTGTQ100A65T1G APTGTQ100A65T1G C rev 0 may, 2016 www.microsemi.com 5-6 t j =25c t j =150c 0 50 100 150 200 00 . 511 . 522 . 5 i f (a) v f (v) diode forward characteristic hard switching zcs zvs 0 50 100 150 200 250 20 40 60 80 100 fm ax, ope r ating fr e quency (k hz ) i c (a) v ce =300v d=50% r g =2 ? t j =150c t c =85c operating frequency vs collector current d = 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.00001 0.0001 0.001 0.01 0.1 1 10 thermal impedance (c/w) rectangular pulse duration in seconds maxim um effective transient thermal im pedance, junction to case vs pulse du ration diode downloaded from: http:///
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